Optical absorption of intersubband transitions in In0.3Ga0.7As/GaAs multiple quantum dots
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1567813
Reference22 articles.
1. InAs quantum dot infrared photodetectors with In0.15Ga0.85As strain-relief cap layers
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3. Normal incidence InAs/AlxGa1−xAs quantum dot infrared photodetectors with undoped active region
4. Tailoring detection bands of InAs quantum-dot infrared photodetectors using InxGa1−xAs strain-relieving quantum wells
5. A five-period normal-incidence (In, Ga)As/GaAs quantum-dot infrared photodetector
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1. Computations of the optical transitions and absorption spectra in a set of realistic, elongated InAs/GaAs quantum boxes having a Gaussian distribution;Journal of Applied Physics;2011-03
2. Intraband magneto-optical absorption in InAs/GaAs quantum dots: Orbital Zeeman splitting and the Thomas-Reiche-Kuhn sum rule;Physical Review B;2008-05-20
3. Effects of a Gaussian size distribution on the absorption spectra of III-V semiconductor quantum dots;Journal of Applied Physics;2007-10-15
4. Intersubband transitions in proton irradiated InGaAs∕GaAs multiple quantum dots;Applied Physics Letters;2005-08-29
5. Effects of Si-doped GaAs layer on optical properties of InAs quantum dots;Physica E: Low-dimensional Systems and Nanostructures;2005-01
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