A five-period normal-incidence (In, Ga)As/GaAs quantum-dot infrared photodetector

Author:

Pan Dong,Towe Elias,Kennerly Steve

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Cited by 105 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Heat Flow through Nonideal Contacts in Hot-Carrier Solar Cells;Physical Review Applied;2023-09-01

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3. Formation mechanisms of agglomerations in high-density InAs/GaAs quantum dot multi-layer structures;Applied Surface Science;2020-04

4. Structural and Optical Characterization of Quaternary-Capped InAs/GaAs Quantum Dots;Quaternary Capped In(Ga)As/GaAs Quantum Dot Infrared Photodetectors;2017-09-07

5. Structural, Optical and Spectral Characterization of Single-Layer QDIPs;Structural, Optical and Spectral Behaviour of InAs-based Quantum Dot Heterostructures;2017-08-05

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