Structural and Optical Characterization of Quaternary-Capped InAs/GaAs Quantum Dots
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Publisher
Springer Singapore
Link
http://link.springer.com/content/pdf/10.1007/978-981-10-5290-3_2
Reference28 articles.
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2. D. Pan, E. Towe, S. Kennerly, A five-period normal-incidence (In, Ga) As/GaAs quantum-dot infrared photodetector. Appl. Phys. Lett. 75, 2719–2721 (1999)
3. J. Phillips, P. Bhattacharya, S. Kennerly, D. Beekman, M. Dutta, Self-assembled InAs-GaAs quantum-dot intersubband detectors. Quantum Electron. IEEE J. 35, 936–943 (1999)
4. T. Badcock, H. Liu, K. Groom, C. Jin, M. Gutierrez, M. Hopkinson, et al., 1.3 μm InAs/GaAs quantum-dot laser with low-threshold current density and negative characteristic temperature above room temperature. Electron. Lett. 42, 922–923 (2006)
5. H. Liu, S. Liew, T. Badcock, D. Mowbray, M. Skolnick, S. Ray, et al., p-doped 1.3 μm InAs∕ GaAs quantum-dot laser with a low threshold current density and high differential efficiency. Appl. Phys. Lett. 89, 073113 (2006)
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