Conduction intersubband (In,Ga)As/GaAs quantum dot infrared photodetectors
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19981278?crawler=true&mimetype=application/pdf
Reference9 articles.
1. Normal incident infrared absorption from InGaAs/GaAs quantum dot superlattice
2. Strong normal-incidence infrared absorption and photo-current spectra from highly uniform (In,Ga)As/GaAs quantum dot structures
3. Photoluminescence and far-infrared absorption in Si-doped self-organized InAs quantum dots
4. Mid-infrared photoconductivity in InAs quantum dots
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1. Quantum-Dot Infrared Photodetector;Complete Guide to Semiconductor Devices;2010-11-03
2. Formation of stacked linear InAs quantum dot arrays on InGaAsP/InP(100) by self-organized anisotropic strain engineering;physica status solidi (b);2009-04
3. Time-Resolved Photoluminescence Spectroscopy: A Novel Technique for Determination of Luminescence of Quantum Dots;Chinese Physics Letters;2007-07-26
4. Three-Modal Size Distribution of Self-assembled InAs Quantum Dots;Japanese Journal of Applied Physics;2005-04-08
5. Comparison of intraband absorption and photocurrent in InAs/GaAs quantum dots;Applied Physics Letters;2003-07-28
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