Slow and fast traps in metal-oxide-semiconductor capacitors fabricated on recessed AlGaN/GaN heterostructures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4917250
Reference35 articles.
1. Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures
2. Prospects for the application of GaN power devices in hybrid electric vehicle drive systems
3. Merits of gallium nitride based power conversion
4. Recessed-gate enhancement-mode GaN HEMT with high threshold voltage
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