Low temperature fabrication and characterization of nickel germanide Schottky source/drain contacts for implant-less germanium p-channel metal-oxide-semiconductor field-effect transistors-Reference-Cited by-同舟云学术

Low temperature fabrication and characterization of nickel germanide Schottky source/drain contacts for implant-less germanium p-channel metal-oxide-semiconductor field-effect transistors

Published:2012-05-07 Issue:19 Volume:100 Page:192101
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Gajula D. R.,McNeill D. W.,Coss B. E.,Dong H.,Jandhyala S.,Kim J.,Wallace R. M.,Armstrong B. M.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4712564

Reference15 articles.

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4. Effect of surface NH3 anneal on the physical and electrical properties of HfO2 films on Ge substrate

5. Characterization of the “clean-up” of the oxidized Ge(100) surface by atomic layer deposition

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4. Experimental Realization of a Ternary-Phase Alloy Through Microwave-Activated Annealing for Ge Schottky pMOSFETs;IEEE Transactions on Electron Devices;2016-07

5. New concept of planar germanium MOSFET with stacked germanide layers at source/drain;Japanese Journal of Applied Physics;2015-03-19