Effect of supersaturation on the interface abruptness of AlGaAs/GaAs/AlGaAs quantum well grown by liquid phase epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.354522
Reference6 articles.
1. LPE In1−xGaxP1−zAsz(x∼0.12,z∼0.26) DH laser with multiple thin‐layer (<500 Å) active region
2. LPE Growth of AlGaAs-GaAs Quantum Well Heterostructures
3. Abrupt heterointerfaces in Al0.35Ga0.65As/Al0.05Ga0.95As/Al0.35Ga0.65As quantum well structure grown by liquid‐phase epitaxy
4. Luminescence of Ga1−xAlxAs/GaAs single quantum wells grown by liquid phase epitaxy
5. Single and multiple AlGaAs quantum‐well structures grown by liquid‐phase epitaxy
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