Luminescence of Ga1−xAlxAs/GaAs single quantum wells grown by liquid phase epitaxy-Reference-Cited by-同舟云学术

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Luminescence of Ga1−xAlxAs/GaAs single quantum wells grown by liquid phase epitaxy

Published:1986-01-13 Issue:2 Volume:48 Page:157-159
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Kelting K.,Koehler K.,Zwicknagl P.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.96929

Reference16 articles.

1. Quantum-well Inp-Inl−xGaxPl−zAsz heterostructure lasers grown by liquid phase epitaxy (LPE)

2. A 1.3 µm InGaAsP/InP Multiquantum Well Laser Grown by LPE

3. Quantum States of Confined Carriers in Very ThinAlxGa1−xAs-GaAs-AlxGa1−xAsHeterostructures

4. Excitons in GaAs quantum wells

5. Reflectance of two-dimensional excitons in GaAs-AlGaAs quantum wells

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1. III–V Semiconductor Photoelectrodes;Semiconductors and Semimetals;2017

2. Liquid-Phase Epitaxy;Handbook of Crystal Growth;2015

3. Liquid Phase Epitaxy: A Survey of Capabilities, Recent Developments and Specialized Applications;Liquid Phase Epitaxy of Electronic, Optical and Optoelectronic Materials;2007-09-04

4. Liquid Phase Epitaxy of Quantum Wells and Quantum Dots;Liquid Phase Epitaxy of Electronic, Optical and Optoelectronic Materials;2007-09-04

5. Photoluminescence from InAs quantum wells grown by liquid-phase epitaxy;Applied Physics A Materials Science & Processing;2000-09

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