Single and multiple AlGaAs quantum‐well structures grown by liquid‐phase epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.346570
Reference19 articles.
1. cw room‐temperature operation of GaAlAs single quantum well visible (7300 Å) diode lasers at 100 mW
2. An isothermal etchback‐regrowth method for high‐efficiency Ga1−xAlxAs‐GaAs solar cells
3. Distribution of Impurities in Zn,O-Doped GaP Liquid Phase Epitaxy Layers
4. Auger profiling of ’’abrupt’’ LPE AlxGa1−xAs‐GaAs heterojunctions
5. Isothermal LPE growth of thin graded band‐gap AlxGa1−xAs layers
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Doping and surface morphology of AlxGa1−xAs/GaAs grown at low temperature by liquid-phase epitaxy;Journal of Crystal Growth;1998-03
2. Interface luminescence of GaAs/Ga1−xAlxAs heterostructures: Threshold effect of the interface formation conditions;Physical Review B;1995-06-15
3. Effect of supersaturation on the interface abruptness of AlGaAs/GaAs/AlGaAs quantum well grown by liquid phase epitaxy;Journal of Applied Physics;1993-09
4. The finite-element analysis of slider-induced convection in two-phase lpe growth system;Microwave and Optical Technology Letters;1992-01
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