Electrical and thermal transient during dielectric breakdown of thin oxides in metal-SiO2-silicon capacitors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.368050
Reference13 articles.
1. Defect production, degradation, and breakdown of silicon dioxide films
2. Exploratory observations of post‐breakdown conduction in polycrystalline‐silicon and metal‐gated thin‐oxide metal‐oxide‐semiconductor capacitors
3. Soft breakdown of ultra-thin gate oxide layers
4. Trap creation in silicon dioxide produced by hot electrons
5. Oxide field dependence of SiSiO2 interface state generation and charge trapping during electron injection
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