Development of spatial nearest-neighbor analysis and Clustering/Gibbs statistical methodology for filament percolation in dielectric breakdown and forming process in ReRAM devices
Author:
Affiliation:
1. Essex Junction,IBM Research Division,Vermont
2. IBM Research Division,Yorktown Heights,New York,USA
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9720433/9720494/09720584.pdf?arnumber=9720584
Reference17 articles.
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Mapping and statistical analysis of filaments locations in amorphous HfO2 ReRAM cells;Microelectronics Reliability;2023-07
2. Endurance Prediction Based on Hidden Markov Model and Programming Optimization for 28nm 1Mbit Resistive Random Access Memory Chip;IEEE Electron Device Letters;2023-06
3. Filament Localization and Characterization in Hf02 ReRAM Cells using Laser Stimulation;ESSDERC 2022 - IEEE 52nd European Solid-State Device Research Conference (ESSDERC);2022-09-19
4. Gibbs spatial process for characterization of filament interaction in ReRAM devices via photon emission microscopy;Applied Physics Letters;2022-03-28
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