Endurance Prediction Based on Hidden Markov Model and Programming Optimization for 28nm 1Mbit Resistive Random Access Memory Chip-Reference-Cited by-同舟云学术

Endurance Prediction Based on Hidden Markov Model and Programming Optimization for 28nm 1Mbit Resistive Random Access Memory Chip

Author:

Zheng Xu¹,Wu Lizhou²,Dong Danian¹^ORCID,Yu Jie³,Lai Jinru⁴,Sun Wunxuan¹,Xue Xiaoyong¹^ORCID,Chen Bing⁵^ORCID,Pang Wan¹,Xu Xiaoxin¹^ORCID

Affiliation:

1. Key Laboratory of Microelectronics Device & Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing, China

2. School of Microelectronics, Fudan University, Shanghai, China

3. Frontier Institute of Chip and System, Fudan University, Shanghai, China

4. University of Science and Technology of China, Hefei, China

5. College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou, China

Funder

Strategic Priority Research Program of the CAS

NSFC

Beijing Municipal Science & Technology Commission Program

China Association for Science and Technology

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

Reference18 articles.

5. Dynamic ‘hour glass’ model for SET and RESET HfO2 RRAM;degraeve;Proc Symp VLSI Technol (VLSIT),2012

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