Electronic mobility limited by optical phonons in Al2O3/AlGaN/GaN double heterojunctions
Author:
Affiliation:
1. Department of Physics, School of Physical Science and Technology, Inner Mongolia University, Hohhot 010021, China
2. Ordos Institute of Applied Technology, Ordos 017000, Inner Mongolia, China
Funder
National Natural Science Foundation of China (NSFC)
Natural Science Foundation of Inner Mongolia (Inner Mongolia Natural Science Foundation)
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4963366
Reference34 articles.
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