Interface optical phonons in double-channel AlGaN/GaN heterostructures: The ternary mixed crystal effect and size effect-Reference-Cited by-同舟云学术

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Interface optical phonons in double-channel AlGaN/GaN heterostructures: The ternary mixed crystal effect and size effect

Published:2021-07-21 Issue:3 Volume:130 Page:035702
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Zhou X. J.¹^ORCID,Gu Z.²^ORCID,Xing Y.³

Affiliation:

1. Ordos Institute of Applied Technology, Ordos 017000, China

2. Department of Mathematics and Physics, Shijiazhuang Tiedao University, Shijiazhuang 050043, China

3. Department of Physics, School of Physical Science and Technology, Inner Mongolia University, Hohhot 010021, China

Funder

National Natural Science Foundation of China

Research Program of Ordos Institute of Technology

Fundamental Research Funds for the Provincial Universities in Hebei Province

Natural Science Foundation of Inner Mongolia

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0055568

Reference39 articles.

1. Electrons and Phonons in Semiconductor Multilayers

2. Momentum relaxation due to polar optical phonons in AlGaN/GaN heterostructures

3. Hot electron energy relaxation in lattice-matched InAlN/AlN/GaN heterostructures: The sum rules for electron-phonon interactions and hot-phonon effect

4. Phonon effects on interband optical transitions in InAs 0.8 P 0.2 /InP quantum wire

5. Phonon-assisted radiative recombination of excitons confined in strongly anisotropic nanostructures

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