Impact of byproducts formed on a 4H–SiC surface on interface state density of Al2O3/4H–SiC(0001) gate stacks-Reference-Cited by-同舟云学术

Impact of byproducts formed on a 4H–SiC surface on interface state density of Al2O3/4H–SiC(0001) gate stacks

Published:2020-06-01 Issue:22 Volume:116 Page:222104
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Doi Takuma¹²^ORCID,Shibayama Shigehisa¹,Takeuchi Wakana¹³,Sakashita Mitsuo¹,Taoka Noriyuki¹,Shimizu Mitsuaki²^ORCID,Nakatsuka Osamu¹⁴^ORCID

Affiliation:

1. Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan

2. National Institute of Advanced Industrial Science and Technology and Nagoya University, GaN Advanced Device Open Innovation Laboratory, Furo-cho, Chikusa-ku, Nagoya 464-8601, Japan

3. Aichi Institute of Technology, Yakusa-cho, Toyota 470-0392, Japan

4. Institute of Materials and Systems for Sustainability, Nagoya University, Nagoya 464-8601, Japan

Funder

Power academy

JSPS KAKENHI

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5143574

Reference35 articles.

1. Step-controlled epitaxial growth of SiC: High quality homoepitaxy

2. Material science and device physics in SiC technology for high-voltage power devices

3. Status and prospects for SiC power MOSFETs

4. Effect of nitric oxide annealing on the interface trap densities near the band edges in the 4H polytype of silicon carbide

5. Characterization of traps at nitrided SiO2/SiC interfaces near the conduction band edge by using Hall effect measurements

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