Electron mobility and charge correlation in silicon doped GaAs–AlAs short period superlattices
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.373848
Reference17 articles.
1. Deep donor levels (DXcenters) in III‐V semiconductors
2. Chapter 5.3 Spatial Correlations of Impurity Charges in Doped Semiconductors
3. Spatial correlations of DX charges and electron mobility in AlxGa1-xAs
4. The DX-Centers Related Mobility in AlGaAs: Charge Correlation and Multilevel-Structure Effects
5. Pressure dependence of electron concentration and mobility in GaAs:Si-effects of on-site and inter-site interactions within a system of DX centres
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