Spatial correlations of DX charges and electron mobility in AlxGa1-xAs
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/0268-1242/8/i=1/a=002/pdf
Reference33 articles.
1. Deep donor levels (DXcenters) in III‐V semiconductors
2. Donor-related levels in GaAs and AlxGa1-xAs
3. The capture barrier of theDXcenter in Si‐doped AlxGa1−xAs
4. Carrier Capture Processes at DX Centers
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2. Electron mobility and charge correlation in silicon doped GaAs–AlAs short period superlattices;Journal of Applied Physics;2000-08
3. New type of persistent photoconductivity related to DX-center: the study of interband PPC in Si-doped AlGaAs;Physica B: Condensed Matter;1999-12
4. Inverted order of acceptor and donor levels of the Si-related DX center inAlxGa1−xAs;Physical Review B;1997-02-15
5. Control of the n-type doping in AlxGa1 − xSb: DX-center behavior of the Te impurity;Materials Science and Engineering: B;1997-02
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