Inverted order of acceptor and donor levels of the Si-related DX center inAlxGa1−xAs
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.55.4042/fulltext
Reference22 articles.
1. Electron correlations in narrow energy bands
2. Valence-Alternation Model for Localized Gap States in Lone-Pair Semiconductors
3. Negative-U Properties for Point Defects in Silicon
4. Negative-UProperties for Interstitial Boron in Silicon
5. Negative-Udefect: Interstitial boron in silicon
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1. Photoluminescence properties of heavily doped heterostructures based on (Al x Ga1 − x As)1 − y Si y solid solutions;Physics of the Solid State;2013-10
2. Slow Relaxation of Nonequilibrated Photo-carriers in Semiconductors;Phase Transitions;2004-08
3. Characteristics of QWIPs at low background;Infrared Physics & Technology;2001-06
4. Chemical bonding and structure of metastable impurity centers in semiconductor crystals;Journal of Structural Chemistry;2000-07
5. DX centers in Al0.3Ga0.7As/GaAs analyzed by point contact measurements;Journal of Applied Physics;1998-08-15
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