Pressure dependence of electron concentration and mobility in GaAs:Si-effects of on-site and inter-site interactions within a system of DX centres-Reference-Cited by-同舟云学术

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Pressure dependence of electron concentration and mobility in GaAs:Si-effects of on-site and inter-site interactions within a system of DX centres

Published:1990-03-01 Issue:3 Volume:5 Page:261-264
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Suski T,Wisniewski P,Litwin-Staszewska E,Kossut J,Wilamowski Z,Dietl T,Swiatek K,Ploog K,Knecht J

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/5/i=3/a=013/pdf

Reference11 articles.

1. Theory of the Atomic and Electronic Structure ofDXCenters in GaAs andAlxGa1−xAsAlloys

2. Chadi, Chang, and Walukiewicz reply

3. Correlation of donor electrons in diluted magnetic semiconductors with iron

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