Ultrafast progressive breakdown associated with metal-like filament formation of a breakdown path in a HfO2∕TaN∕TiN transistor-Reference-Cited by-同舟云学术

Ultrafast progressive breakdown associated with metal-like filament formation of a breakdown path in a HfO2∕TaN∕TiN transistor

Published:2006-03-20 Issue:12 Volume:88 Page:122907
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Ranjan R.,Pey K. L.,Tung C. H.,Ang D. S.,Tang L. J.,Kauerauf T.,Degraeve R.,Groeseneken G.,De Gendt S.,Bera L. K.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2186969

Reference20 articles.

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2. Abrupt breakdown in dielectric/metal gate stacks: a potential reliability limitation?

3. K. L. Pey, R. Ranjan, C. H. Tung, L. J. Tang, W. H. Lin, and M. K. Radhakrishnan, IEEE Proceedings of the International Reliability Physics Symposium (IEEE, Piscataway, NJ, 2004), p. 117.

4. R. Degraeve, B. Kaczer, A. De Keersgieter, and G. Groeseneken, IEEE Proceedings of the International Reliability Physics Symposium (IEEE, Piscataway, NJ, 2001), p. 360.

5. Breakdown Transients in Ultrathin Gate Oxides: Transition in the Degradation Rate

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