Uncorrelated multiple conductive filament nucleation and rupture in ultra-thin high-κ dielectric based resistive random access memory
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3624597
Reference26 articles.
1. Overview of candidate device technologies for storage-class memory
2. Controllable Growth of Nanoscale Conductive Filaments in Solid-Electrolyte-Based ReRAM by Using a Metal Nanocrystal Covered Bottom Electrode
3. Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges
4. Resistive switching in transition metal oxides
5. Who Wins the Nonvolatile Memory Race?
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2. Mapping and statistical analysis of filaments locations in amorphous HfO2 ReRAM cells;Microelectronics Reliability;2023-07
3. Probing resistive switching in HfO2/Al2O3 bilayer oxides using in-situ transmission electron microscopy;Applied Materials Today;2023-04
4. Gibbs spatial process for characterization of filament interaction in ReRAM devices via photon emission microscopy;Applied Physics Letters;2022-03-28
5. Multi‐Level Control of Conductive Filament Evolution and Enhanced Resistance Controllability of the Cu‐Cone Structure Embedded Conductive Bridge Random Access Memory;Advanced Electronic Materials;2021-06-21
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