Analysis of the improvement of Al–Ta2O5/SiO2–Si structures reliability by Si substrate plasma nitridation in N2O
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials
Reference40 articles.
1. On the electrical stress-induced oxide-trapped charges in thin HfO2∕SiO2 gate dielectric stack
2. Suppression of oxygen vacancy formation in Hf-based high-k dielectrics by lanthanum incorporation
3. Optical properties and structure of HfO2thin films grown by high pressure reactive sputtering
4. Metal-insulator-metal capacitors’ current instability improvement using dielectric stacks to prevent oxygen vacancies formation
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Interface properties of Si-SiO2-Ta2O5 structure by cathodoluminescence spectroscopy;Journal of Applied Physics;2016-02-07
2. Peculiarities of the Interface between High-Permittivity Dielectrics and Semiconductors;Frontiers in Materials;2014-12-08
3. Physical modeling of electrical and dielectric properties of high-k ta2o5 based MOS capacitors on silicon;Facta universitatis - series: Electronics and Energetics;2014
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