Interface properties of Si-SiO2-Ta2O5 structure by cathodoluminescence spectroscopy
Author:
Affiliation:
1. St. Petersburg State University, St. Petersburg 198504, Russia
2. School of Physics, The University of Western Australia, Perth, Western Australia 6009, Australia
Funder
Research Grant of St. Petersburg State University
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4941270
Reference22 articles.
1. Wear-out of Al–Ta2O5/SiO2–Si structures under dynamic stress
2. High-κ gate dielectrics: Current status and materials properties considerations
3. Electrical properties of high-κ gate dielectrics: Challenges, current issues, and possible solutions
4. On the scaling issues and high-κ replacement of ultrathin gate dielectrics for nanoscale MOS transistors
5. High-K materials and metal gates for CMOS applications
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1. Features of SiO2 Layers Synthesized on Silicon by Molecular Layer Deposition;Semiconductors;2020-04
2. Electroluminescence of Ta2O5 Films Formed by Molecular Layer Deposition;Optics and Spectroscopy;2020-02
3. Cathodoluminescence of TiO2 Films Formed by Molecular Layer Deposition;Technical Physics Letters;2019-03
4. Frequency Dependence of C-V Characteristics of MOS Capacitors Containing Nanosized High-κ Ta2O5 Dielectrics;Advances in Materials Science and Engineering;2017
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