Wear-out of Al–Ta2O5/SiO2–Si structures under dynamic stress
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry
Reference30 articles.
1. Conduction mechanisms and reliability of thermal Ta2O5–Si structures and the effect of the gate electrode
2. Dielectric properties enhancement of ZrO[sub 2] thin films induced by substrate biasing
3. Correlation between scanning-probe-induced spots and fixed positive charges in thin HfO2 films
4. Influence of the oxygen concentration of atomic-layer-deposited HfO2 films on the dielectric property and interface trap density
5. On the band structure lineup at interfaces of SiO2, Si3N4, and high-κ dielectrics
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1. Interface properties of Si-SiO2-Ta2O5 structure by cathodoluminescence spectroscopy;Journal of Applied Physics;2016-02-07
2. Analysis of the improvement of Al–Ta2O5/SiO2–Si structures reliability by Si substrate plasma nitridation in N2O;Thin Solid Films;2009-06
3. Studies on dielectric relaxation and defect generation for reliability assessments in ultrathin high-k gate dielectrics on Ge;Microelectronic Engineering;2008-11
4. Reliability of Ti-based Gate Dielectrics on strained-Si0.91Ge0.09 and Ge under Dynamic and AC Stressing;ECS Transactions;2008-10-03
5. Behavior of Local Charge-Trapping Sites in La2O3–Al2O3Composite Films under Constant Voltage Stress;Japanese Journal of Applied Physics;2007-04-24
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