Explaining an unusual electromigration behavior—A comprehensive experimental and theoretical analysis using finite element method
Author:
Affiliation:
1. Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, USA
2. Department of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, USA
Funder
U.S. Department of Energy
National Science Foundation
Indiana Innovation Institute
Office of Naval Research
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
https://aip.scitation.org/doi/am-pdf/10.1063/5.0040526
Reference26 articles.
1. Electromigration failure modes in aluminum metallization for semiconductor devices
2. A model for conductor failure considering diffusion concurrently with electromigration resulting in a current exponent of 2
3. Electromigration in thin aluminum films on titanium nitride
4. Prediction of electromigration failure in passivated polycrystalline line
5. Static and dynamic analysis of failure locations and void formation in interconnects due to various migration mechanisms
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