Effect of substrate temperature on molecular beam epitaxial GaAs growth using As2
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.334282
Reference19 articles.
1. Improved AlxGa1−xAs bulk lasers with superlattice interfaces
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3. Double heterojunction GaAs/AlxGa1−xAs bipolar transistors prepared by molecular beam epitaxy
4. Double heterojunction GaAs/AlxGa1−xAs bipolar transistors prepared by molecular beam epitaxy
5. Influence of Substrate Temperature on the Morphology of Al x Ga1 − x As Grown by Molecular Beam Epitaxy
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