Double heterojunction GaAs/AlxGa1−xAs bipolar transistors prepared by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.331860
Reference17 articles.
1. The realization of a GaAs—Ge wide band gap emitter transistor
2. ZnSe—Ge heterojunction transistors
3. GaAs–GaxAl1−xAs Heterostructure Injection Lasers which Exhibit Low Thresholds at Room Temperature
4. (GaAl)As‐GaAs heterojunction transistors with high injection efficiency
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