Analysis of structural changes in plasma-deposited fluorinated silicon dioxide films caused by fluorine incorporation using ring-statistics based mechanism-Reference-Cited by-同舟云学术

Analysis of structural changes in plasma-deposited fluorinated silicon dioxide films caused by fluorine incorporation using ring-statistics based mechanism

Published:1999-07 Issue:1 Volume:86 Page:275-280
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Pankov V.,Alonso J. C.,Ortiz A.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.370726

Reference23 articles.

1. Preparation of Low-Dielectric-Constant F-DopedSiO2Films by Plasma-Enhanced Chemical Vapor Deposition

2. Interaction between water and fluorine-doped silicon oxide films deposited by plasma-enhanced chemical vapor deposition

3. Deposition of stable, low κ and high deposition rate SiF4-doped TEOS fluorinated silicon dioxide (SiOF) films

4. Chemical‐Mechanical Polishing and Material Characteristics of Plasma‐Enhanced Chemically Vapor Deposited Fluorinated Oxide Thin Films

5. Structure of fluorine-doped silicon oxide films deposited by plasma-enhanced chemical vapor deposition

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