Giant polarized photoluminescence and photoconductivity in type-II GaAs/GaAsSb multiple quantum wells induced by interface chemical bonds
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1532108
Reference17 articles.
1. Intermixing in GaAsSb/GaAs single quantum wells
2. Raman scattering and optical-absorption studies of the metastable alloy systemGaAsxSb1−x
3. Giant Optical Anisotropy of Semiconductor Heterostructures with No Common Atom and the Quantum-Confined Pockels Effect
4. InAlAs/InP heterostructures: Influence of a thin InAs layer at the interface
5. Interface optical anisotropy in a heterostructure with different cations and anions
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1. Optical anisotropy in type-II (110)-oriented GaAsSb/GaAs quantum wells;Solid State Communications;2020-07
2. Unusual optical properties of type-IIInAs∕GaAs0.7Sb0.3quantum dots by photoluminescence studies;Physical Review B;2007-01-17
3. Tensile-strained GaAs quantum wells and quantum dots in aGaAsxSb1−xmatrix;Physical Review B;2004-11-10
4. Nature of persistent photoconductivity in GaAs0.7Sb0.3∕GaAs multiple quantum wells;Applied Physics Letters;2004-08-30
5. Suppression of exciton recombination in symmetric GaAs0.7Sb0.3/GaAs/GaAs0.7P0.3 coupled quantum wells induced by an in-plane magnetic field;Journal of Applied Physics;2004-01-15
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