Nature of persistent photoconductivity in GaAs0.7Sb0.3∕GaAs multiple quantum wells
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1787613
Reference19 articles.
1. GaAsSb resonant-cavity-enhanced photodetector operating at 1.3 μm
2. GaAsSb: a novel material for near infrared photodetectors on GaAs substrates
3. Continuous-wave operation of 1.30 [micro sign]m GaAsSb/GaAs VCSELs
4. Continuous-wave operation of a 1.3-/spl mu/m GaAsSb-GaAs quantum-well vertical-cavity surface-emitting laser at room temperature
5. Giant polarized photoluminescence and photoconductivity in type-II GaAs/GaAsSb multiple quantum wells induced by interface chemical bonds
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