Unusual optical properties of type-IIInAs∕GaAs0.7Sb0.3quantum dots by photoluminescence studies-Reference-Cited by-同舟云学术

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Unusual optical properties of type-IIInAs∕GaAs0.7Sb0.3quantum dots by photoluminescence studies

Published:2007-01-17 Issue:3 Volume:75 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Chen T. T.,Cheng C. L.,Chen Y. F.,Chang F. Y.,Lin H. H.,Wu C.-T.,Chen C.-H.

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.75.033310/fulltext

Reference19 articles.

1. Mechanism for improvements of optical properties of 1.3-μm InAs∕GaAs quantum dots by a combined InAlAs–InGaAs cap layer

2. Stacking and polarization control of wavelength-tunable (1.55μm region) InAs∕InGaAsP∕InP (100) quantum dots

3. Influence of GaAs capping on the optical properties of InGaAs/GaAs surface quantum dots with 1.5 μm emission

4. Room-temperature 1.6μm light emission from InAs∕GaAs quantum dots with a thin GaAsSb cap layer

5. Long-wavelength light emission and lasing from InAs∕GaAs quantum dots covered by a GaAsSb strain-reducing layer

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2. Impact of linear alloy on strain coupled bilayer InAs/GaAs1-ySby quantum dot heterostructures;Physics and Simulation of Optoelectronic Devices XXXI;2023-03-10

3. InAs quantum dot-in-a-well heterostructures with InGaAs, GaAsN and GaAsSb well using digital alloy capping layer;Current Applied Physics;2023-03

4. Theoretical Study on Vertically Coupled Stranski-Krastanov (SK) on Sub Monolayer (SML) InAs Quantum Dot Heterostructures Employing Ternary and Quaternary Barrier Materials;IEEE Transactions on Nanotechnology;2023

5. Strain Minimization of InAs QDs Heterostructures Using Dual Quaternary-Ternary/Ternary-Quaternary Capping Materials via Digital Alloy Capping Layer Approach;IEEE Transactions on Nanotechnology;2022

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