Stacking and polarization control of wavelength-tunable (1.55μm region) InAs∕InGaAsP∕InP (100) quantum dots
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2172729
Reference13 articles.
1. Multidimensional quantum well laser and temperature dependence of its threshold current
2. Gain and the threshold of three-dimensional quantum-box lasers
3. Effects of As/P exchange reaction on the formation of InAs/InP quantum dots
4. InAs self-assembled quantum-dot lasers grown on (100) InP
5. Wavelength tuning of InAs quantum dots grown on InP (100) by chemical-beam epitaxy
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1. Impact of Excited States Transitions on Polarization Property of InAs/InP Quantum Dots;IEEE Journal of Quantum Electronics;2022-02
2. Ultra-broadband tunable single- and double-mode InAs/InP quantum dot external-cavity laser emitting around 165 μm;Optics Letters;2018-06-18
3. Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices;Progress in Quantum Electronics;2014-11
4. Increase in photoluminescence intensity of InAs columnar quantum dots on InP(001) substrate by increasing indium and phosphorous composition in InGaAsP barrier layers;Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling IX;2012-02-09
5. Study of multiple-stacking growth of 1.55μm InAs columnar quantum dots with modulated tensile-strained InGaAsP barrier layers;Journal of Crystal Growth;2012-02
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