Optical anisotropy in type-II (110)-oriented GaAsSb/GaAs quantum wells
Author:
Funder
Daegu Catholic University Republic of Korea
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference24 articles.
1. Optical gain of strained GaAsSb/GaAs quantum-well lasers: A self-consistent approach
2. Structural and optical properties of GaAsSb/GaAs heterostructure quantum wells
3. GaSb-based composite quantum wells for laser diodes operating in the telecom wavelength range near 1.55-μm
4. High-temperature operation of electrical injection type-II (GaIn)As/Ga(AsSb)/(GaIn)As “W”-quantum well lasers emitting at 1.3 µm
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1. Active Region Design With Different Crystal Orientations for High-Speed DFB Laser;IEEE Photonics Journal;2024-02
2. Investigation of linear and third-order nonlinear optical properties of laser-dressed GaAs/GaAsSb/GaAs parabolic valence-band quantum wells;The European Physical Journal Plus;2023-02-09
3. Numerical Investigation of Optical and Photoelectric Properties for 850 nm VCSELs with Arbitrary Crystal Orientation;Crystals;2022-10-15
4. Investigating the effect of position-dependent effective mass on the valence-band electronic states of GaAs/GaAsSb/GaAs parabolic quantum wells modulated by intense laser fields;Solid State Communications;2022-09
5. Numerical investigation into optical and electronic performance of crystal orientation-dependent InGaAs/InP near-infrared laser;Results in Physics;2021-07
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