Chemical states and electrical properties of a high-k metal oxide/silicon interface with oxygen-gettering titanium-metal-overlayer
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2358834
Reference9 articles.
1. Engineering chemically abrupt high-k metal oxide∕silicon interfaces using an oxygen-gettering metal overlayer
2. Etch rates for micromachining processing-part II
3. Chemical states and electronic structure of a HfO2∕Ge(001) interface
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