Engineering chemically abrupt high-k metal oxide∕silicon interfaces using an oxygen-gettering metal overlayer
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1776636
Reference24 articles.
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4. Electrical and materials properties of ZrO2 gate dielectrics grown by atomic layer chemical vapor deposition
5. Effects of crystallization on the electrical properties of ultrathin HfO2 dielectrics grown by atomic layer deposition
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