P‐1.8: High Performance Amorphous IZO/IGZO Bilayer Thin Film Transistors for Ink‐jet Printed AMOLED Displays-Reference-Cited by-同舟云学术

P‐1.8: High Performance Amorphous IZO/IGZO Bilayer Thin Film Transistors for Ink‐jet Printed AMOLED Displays

Published:2024-04 Issue:S1 Volume:55 Page:649-653
ISSN:0097-966X
Container-title:SID Symposium Digest of Technical Papers
language:en
Short-container-title:Symp Digest of Tech Papers

Author:

Liu Chenning¹²,Hu Kai¹,Hsu Yuanjun¹,Liu Fangmei¹,Liu Zhaosong¹,Cao Weiran¹,Zhang Shengdong²

Affiliation:

1. School of Electronic and Computer Engineering Peking University Shenzhen China

2. TCL China Star Optoelectronics Technology Co, Ltd. Shenzhen China

Abstract

High‐performance thin film transistors with a remarkable mobility of 38.7 cm2/Vs and excellent stability are demonstrated using amorphous indium zinc oxide (IZO)/indium gallium zinc oxide (IGZO) bilayer film as the active layer. The optimal performance of the bilayer device is found to be contingent upon the critical balance of oxygen flow ratio during sputtering IZO film. The mechanism governing the oxygen‐tuned performance has been thoroughly investigated. A 31‐inch ink‐jet printed AMOLED display panel has been successfully fabricated, with the GOA circuit integrated using this high mobility transistors. The good display performance showcases the significant application potential of the IZO/IGZO bilayer device.

Publisher

Wiley

Reference22 articles.

1. 57.2: Electrical Characterization of BCE-TFTs with a-IGZTO Oxide Semiconductor Compatible with Cu and Al interconnections

2. Achieving High Mobility and Excellent Stability in Amorphous In–Ga–Zn–Sn–O Thin-Film Transistors

3. High Mobility Bilayer Metal–Oxide Thin Film Transistors Using Titanium-Doped InGaZnO