Enhanced oscillator strength of interband transitions in coupled Ge∕Si quantum dots
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2988469
Reference11 articles.
1. Strain and band-edge alignment in single and multiple layers of self-assembled Ge/Si and GeSi/Si islands
2. Electronic structure and compositional interdiffusion in self-assembled Ge quantum dots on Si(001)
3. Electronic structure of Ge/Si self-assembled quantum dots with different shapes
4. Electronic states inGe∕Siquantum dots with type-II band alignment initiated by space-charge spectroscopy
5. Excitons in charged Ge/Si type-II quantum dots
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