Electronic structure and compositional interdiffusion in self-assembled Ge quantum dots on Si(001)
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1357810
Reference15 articles.
1. Self-assembled Ge dots: Growth, characterization, ordering, and applications
2. Intraband absorption in Ge/Si self-assembled quantum dots
3. Far-infrared photoconductivity in self-organized InAs quantum dots
4. Diminished photoluminescence polarization due to exciton ionization in strained Si1−xGex/Si(001) quantum wells
5. Ge/Si self-assembled quantum dots grown on Si(001) in an industrial high-pressure chemical vapor deposition reactor
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