Excitons in charged Ge/Si type-II quantum dots-Reference-Cited by-同舟云学术

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Excitons in charged Ge/Si type-II quantum dots

Published:2000-11-15 Issue:12 Volume:15 Page:1125-1130
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Yakimov A I,Stepina N P,Dvurechenskii A V,Nikiforov A I,Nenashev A V

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference21 articles.

1. Calculation of the exciton binding energies in type-II GaAs/AlAs quantum-well structures: Application of the perturbation-variational expansion method

2. Floquet theory of bound-continuum transitions due to a periodic interaction

3. Phononless radiative recombination of indirect excitons in a Si/Ge type-II quantum dot

4. Carrier dynamics in type-II GaSb/GaAs quantum dots

5. Magnetoexcitons in type-II quantum dots

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2. Atomistic Simulations of Laser-Controlled Exciton Transfer and Stabilization in Symmetric Double Quantum Dots;The Journal of Physical Chemistry A;2021-05-28

3. Energy Spectrum of Charge Carriers in Elastically Strained Assemblies of Ge/Si Quantum Dots;Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques;2018-03

4. Fast Hole Tunneling Times in Germanium Hut Wires Probed by Single-Shot Reflectometry;Nano Letters;2017-08-21

5. Silicon-Based Nanoheterostructures With Quantum Dots;Advances in Semiconductor Nanostructures;2017

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