Carrier dynamics in type-II GaSb/GaAs quantum dots-Reference-Cited by-同舟云学术

Carrier dynamics in type-II GaSb/GaAs quantum dots

Published:1998-02-15 Issue:8 Volume:57 Page:4635-4641
ISSN:0163-1829
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Hatami F.,Grundmann M.,Ledentsov N. N.,Heinrichsdorff F.,Heitz R.,Böhrer J.,Bimberg D.,Ruvimov S. S.,Werner P.,Ustinov V. M.,Kop’ev P. S.,Alferov Zh. I.

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.57.4635/fulltext

Reference21 articles.

1. Low threshold, large To injection laser emission from (InGa)As quantum dots

2. GaAs/GaSb strained‐layer heterostructures deposited by metalorganic vapor phase epitaxy

3. Radiative recombination in type‐II GaSb/GaAs quantum dots

4. Evolution of GaSb epitaxy on GaAs(001)‐c(4×4)

5. Molecular beam epitaxial growth of InSb, GaSb, and AlSb nanometer‐scale dots on GaAs

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