Electronic structure of Ge/Si self-assembled quantum dots with different shapes
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference15 articles.
1. Photoluminescence study of the initial stages of island formation for Ge pyramids/domes and hut clusters on Si(001)
2. H. Sunamura, PhD thesis, Research Center for Advanced Science and Technology (RCAST), The University of Tokyo, 1997.
3. Diminished photoluminescence polarization due to exciton ionization in strained Si1−xGex/Si(001) quantum wells
4. Ge/Si self-assembled quantum dots grown on Si(001) in an industrial high-pressure chemical vapor deposition reactor
5. Strain and composition of capped Ge/Si self-assembled quantum dots grown by chemical vapor deposition
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3. Growth and characterization of Si1−x Getx QDs on Si/Si0.8Ge0.2 layer;Electronic Materials Letters;2012-12
4. Optical properties of Si1−xGex quantum dots grown using RPCVD;Electronic Materials Letters;2011-06
5. Optical Property of Si0.8Ge0.2/Si Multilayer Grown by Using RPCVD;ECS Transactions;2010-10-01
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