Direct quantitative measurement of compositional enrichment and variations in InyGa1−yAs quantum dots
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1415414
Reference13 articles.
1. InAs/InGaAs quantum dot structures on GaAs substrates emitting at 1.3 μm
2. Quantum dot resonant cavity light emitting diode operating near 1300 nm
3. High-performance GaInAs/GaAs quantum-dot lasers based on a single active layer
4. Structural study of InGaAs/GaAs quantum dots grown by metalorganic chemical vapor deposition for optoelectronic applications at 1.3 μm
5. Effect of Size Fluctuations on the Photoluminescence Spectral Linewidth of Closely Stacked InAs Self-Assembled Quantum Dot Structures
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4. Atomic scale characterization of buried InxGa1−xAs quantum dots using pulsed laser atom probe tomography;Applied Physics Letters;2008-06-09
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