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Quantum dot resonant cavity light emitting diode operating near 1300 nm

  • Published:1999 Issue:3 Volume:35 Page:242
  • ISSN:0013-5194
  • Container-title:Electronics Letters
  • language:en
  • Short-container-title:Electron. Lett.

Author:

Gray J.W.,Childs D.,Malik S.,Siverns P.,Roberts C.,Stavrinou P.N.,Whitehead M.,Murray R.,Parry G.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Cited by 24 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. AN EFFICIENCY STUDY OF POLYNOMIAL EIGENVALUE PROBLEM SOLVERS FOR QUANTUM DOT SIMULATIONS;Taiwanese Journal of Mathematics;2010-06-01

2. Optical Properties of In(Ga)As/GaAs Quantum Dots for Optoelectronic Devices;Handbook of Self Assembled Semiconductor Nanostructures for Novel Devices in Photonics and Electronics;2008

3. 1.32 μm InAs∕GaAs quantum-dot resonant-cavity light-emitting diodes grown by metalorganic chemical vapor deposition;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2006

4. Quantum dot VCSELs;physica status solidi (a);2005-02

5. 1.3 μm InAs quantum dot resonant cavity light emitting diodes;Materials Science and Engineering: B;2004-07
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