Comparative study of InAs quantum dots with different InGaAs capping methods
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2454425
Reference23 articles.
1. 1.3 μm room-temperature GaAs-based quantum-dot laser
2. Temperature dependence of lasing characteristics for long-wavelength (1.3-μm) GaAs-based quantum-dot lasers
3. Low-threshold current density 1.3-μm InAs quantum-dot lasers with the dots-in-a-well (DWELL) structure
4. Effect of InGaAs capping layer on the properties of InAs/InGaAs quantum dots and lasers
5. Replacement of group‐III atoms on the growing surface during migration‐enhanced epitaxy
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