rf and dc discharge characteristics for opposed‐targets sputtering
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.337214
Reference5 articles.
1. Facing targets type of sputtering method for deposition of magnetic metal films at low temperature and high rate
2. Formation of Ba-ferrite films with perpendicular magnetization by targets-facing type of sputtering
3. Preparation of Ba-ferrite films for perpendicular magnetic recording by RF targets facing type of sputtering
4. Discharge characteristics for magnetron sputtering of Al in Ar and Ar/O2 mixtures
5. Effect of hydrogen on the deposition rate for planar rf magnetron sputtering of hydrogenated amorphous silicon
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3. The growth, structure, and magnetic properties of thin epitaxial films of GdMnO3 multiferroics;Russian Microelectronics;2012-11-17
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5. Preparation and characterization of highly oriented Pb(Zr,Ti)O3 thin films with seeding titanium layer deposited at low temperature by facing target sputtering;Vacuum;2000-11
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