Convergent beam electron diffraction investigation of strain induced by Ti self-aligned silicides in shallow trench Si isolation structures-Reference-Cited by-同舟云学术

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Convergent beam electron diffraction investigation of strain induced by Ti self-aligned silicides in shallow trench Si isolation structures

Published:2006-03-15 Issue:6 Volume:99 Page:064504
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Armigliato Aldo,Spessot Alessio,Balboni Roberto,Benedetti Alessandro,Carnevale Gianpietro,Frabboni Stefano,Mastracchio Gianfranco,Pavia Giuseppe

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2179136

Reference11 articles.

1. Application of convergent beam electron diffraction to two-dimensional strain mapping in silicon devices

2. Strain measurements by convergent-beam electron diffraction: The importance of stress relaxation in lamella preparations

3. Fabrication of Planar and Cross-Sectional TEM Specimens Using a Focused Ion Beam

4. Higher order Laue zone effects in electron diffraction and their use in lattice parameter determination

5. Analysis of Localised Strains in Crystals by Convergent Beam Electron Diffraction

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1. Diffraction-Based Multiscale Residual Strain Measurements;Microscopy and Microanalysis;2024-03-06

2. Advance TEM application in 10 nm and below technology node chips;Third International Conference on Computer Science and Communication Technology (ICCSCT 2022);2022-12-29

3. 2D Strain Mapping in Sub-10nm SiGe Layer with High-Resolution Transmission Electron Microscopy and Geometric Phase Analysis;Nano Hybrids and Composites;2022-08-31

4. Strain mapping in a nanoscale-triangular SiGe pattern by dark-field electron holography with medium magnification mode;Microscopy;2016-09-08

5. 2D strain measurement in sub-10 nm SiGe layer with dark-field electron holography;Current Applied Physics;2015-11

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