Author:
Young R. J.,Kirk E. C. G.,Williams D. A.,Ahmed H.
Abstract
ABSTRACTA new technique using a focused ion beam has been developed for the fabrication of transmission electron microscopy specimens in pre-selected regions. The method has been proven in the fabrication of both cross-sectional and planar specimens, with no induced artefacts. The lateral accuracy achievable in the selection of an area for cross-sectional analysis is better than one micrometre. The technique has been applied to a number of silicon and III-V based integrated circuits, and is expected to be suitable for many other materials and structures.
Publisher
Springer Science and Business Media LLC
Cited by
85 articles.
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