Analysis of a CF4/O2plasma using emission, laser‐induced fluorescence, mass, and Langmuir spectroscopy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.345317
Reference26 articles.
1. Plasma etching of Si and SiO2—The effect of oxygen additions to CF4 plasmas
2. A kinetic study of the plasma‐etching process. II. Probe measurements of electron properties in an rf plasma‐etching reactor
3. Decomposition and product formation in CF4‐O2plasma etching silicon in the afterglow
4. Silicon etching mechanism and anisotropy in CF4+O2plasma
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