Identification of hexagonal polycrystal in epitaxially grown InN by synchrotron x-ray diffraction and near-edge x-ray absorption fine structure spectroscopy-Reference-Cited by-同舟云学术

Identification of hexagonal polycrystal in epitaxially grown InN by synchrotron x-ray diffraction and near-edge x-ray absorption fine structure spectroscopy

Published:2003-05-05 Issue:18 Volume:82 Page:2981-2983
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Lee Ik Jae,Shin Hyun-Joon,Chang Suk Sang,Lee Min Kyu,Kim Hyung-Kook

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1572475

Reference12 articles.

1. GaN, AlN, and InN: A review

2. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes

3. Shortest wavelength semiconductor laser diode

4. Application of near‐edge x‐ray absorption fine structure for the identification of hexagonal and cubic polytypes in epitaxial GaN

5. UV reflectivity of GaN: Theory and experiment

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