Near-edge x-ray absorption fine structure and x-ray photoemission spectroscopy study of the InN epilayers on sapphire (0001) substrate
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1697615
Reference21 articles.
1. GaN, AlN, and InN: A review
2. Room-temperature continuous-wave operation of InGaN multi-quantum-well-structure laser diodes with a long lifetime
3. High-Power GaN P-N Junction Blue-Light-Emitting Diodes
4. Pseudopotential band structure of indium nitride
5. Pseudofunction theory of the electronic structure of InN
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